The BC54xPAS Series from Nexperia are NPN Medium Power Transistors. They have a collector-emitter breakdown voltage of up to 45 V, an emitter-base voltage of up to 5 V, and a saturated collector-emitter voltage of less than 500 mV. These transistors have a continuous collector current of up to 1 A and a power dissipation of less than 0.42 W. They require a reduced PCB area and consist of an exposed heat sink for efficient thermal conductivity. These transistors include two current gain selections for better power optimization and are suitable for automatic optical inspection (AOI) of solder joints. They are available in surface-mount packages that measure 2.1 x 2.1 x 0.65 mm and are ideal for linear voltage regulators, battery-driven devices, MOSFET drivers, high-side switches, amplifiers and power management applications.