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2N5195G

Bipolar Junction Transistor by onsemi
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The 2N5195G from onsemi is a Silicon PNP Power Transistor that is ideal for use in power amplifiers and switching circuits. It has a collector-emitter voltage of up to 80 V, a base-emitter voltage of 5 V, and a saturated collector-emitter voltage of 1.

Product Specifications

Product Details

  • Part Number
    2N5195G
  • Manufacturer
    onsemi
  • Description
    80 V Silicon PNP Power Transistor for Switching Applications

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.4 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    0.1 to 2 mA
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    4 A
  • DC Current Gain
    7 to 80
  • Gain Bandwidth Product
    2 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-225
  • Application
    Power amplifier and switching circuits
  • Dimension
    7.8 x 27.73 mm

Technical Documents
View details on the manufacturer's website

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