1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Bipolar Junction Transistors
  5. Solid State Devices
  6. SFT2014/3

SFT2014/3

Download Datasheet Request Quote

Note : Your request will be directed to Solid State Devices.

The SFT2014/3 from Solid State Devices is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 2.2 V, Emitter Cut off Current 10 µA, Collector Base Voltage 250 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for SFT2014/3 can be seen below.

Product Specifications

Product Details

  • Part Number
    SFT2014/3
  • Manufacturer
    Solid State Devices
  • Description
    250 V, 0.2 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    2.2 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    250 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    140 V
  • Collector Emitter Voltage
    140 V
  • Continuous Collector Current
    0.2 A
  • DC Current Gain
    5 to 40
  • Gain Bandwidth Product
    30 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    600 W
  • Output Capacitance
    1200 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3

Technical Documents
View details on the manufacturer's website

Latest Bipolar Junction Transistors

View more products