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MJD122T4

Bipolar Junction Transistor by STMicroelectronics
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MJD122T4 Image

The MJD122T4 from STMicroelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 4.5 V, Emitter Cut off Current 2 mA, Collector Base Voltage 100 V, Collector Cut off Current 10 µA. Tags: Surface Mount, NPN Transistor. More details for MJD122T4 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJD122T4
  • Manufacturer
    STMicroelectronics
  • Description
    100 V, 8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    4.5 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    16 A
  • DC Current Gain
    100 to 12000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    20 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    DPAK
  • Application
    General purpose linear and switching.
  • Note
    Complementary, Darlington transistors

Technical Documents
View details on the manufacturer's website

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