The MC33GD3100EK from NXP Semiconductors is an Advanced Single-Channel Gate Driver that has been designed to drive IGBTs and SiC Power MOSFET devices. It requires an input voltage of 5 -40 V. This gate driver is capable of driving gate pins of most of the IGBTs and SiC MOSFETs available in the market and integrates galvanically isolated, low on-resistance drive transistors to provide high charging and discharging current, low dynamic saturation voltage, and rail-to-rail gate voltage control. It ensures low propagation delay and minimal PWM distortion with a segmented drive operation that results in efficient wave shaping. This AEC-Q100 qualified gate driver uses Active Miller Clamp via a Zener diode across the collector-emitter terminals of IGBT/SiC to reduce the turn-off gate supply when an excessive amount of collector-emitter voltage is present and improve clamping tolerance.
The MC33GD3100EK supports the SPI interface to autonomously monitor, control, manage, and report fault conditions and also includes built-in self-test, watchdog, and control functions to ensure the design of high-reliability systems according to ASIL C/D standards. This driver IC is equipped with soft shutdown, under-voltage lockout (UVLO) protection, over-current protection (OCP), and over-temperature sense functions to prevent over-heating or short-circuit-related damages. It is available in a surface-mount package that measures 10.3 x 11.1 mm and is ideal for IGBT, MOSFET, and automotive electronics applications.