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GD50HCU120C8S

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GD50HCU120C8S Image

The GD50HCU120C8S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 75 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50HCU120C8S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD50HCU120C8S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    75 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    401 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Welding machine

Technical Documents
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