FET-E6007PB020

GaN Power Transistor by Ancora Semiconductor (4 more products)

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The FET-E6007PB020 from Ancora Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 64 to 162.5 milli-ohm, Continous Drain Current 8.4 to 18.7 A, Pulsed Drain Current 26.4 to 59.1 A. Tags: Surface Mount. More details for FET-E6007PB020 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FET-E6007PB020
  • Manufacturer
    Ancora Semiconductor
  • Description
    650 V, 64 to 162.5 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    64 to 162.5 milli-ohm
  • Continous Drain Current
    8.4 to 18.7 A
  • Pulsed Drain Current
    26.4 to 59.1 A
  • Total Charge
    5.56 nC
  • Input Capacitance
    198.8 pF
  • Output Capacitance
    49.9 pF
  • Turn-on Delay Time
    2.84 ns
  • Turn-off Delay Time
    10.44 ns
  • Rise Time
    4.06 ns
  • Fall Time
    5.76 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    High switching frequency converter, High density converter
  • Dimensions
    8 x 8 mm

Technical Documents