Note : Your request will be directed to Ancora Semiconductor.
The FET-E6025PB010 from Ancora Semiconductor is a GaN Power Transistor with Drain Source Voltage 650 V, Drain Source Resistance 25 milli-ohm. Tags: Surface Mount. More details for FET-E6025PB010 can be seen below.
700 V e-mode PowerGaN Transistor
40 V E-Mode Bi-Directional GaN Transistor
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