The EPC2378 from Efficient Power Conversion is a GaN Power Transistor. This transistor has a drain-source voltage of up to 25 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of 0.41 milli-ohms. It has a continuous drain current of 101 A and a pulsed drain current of 699 A. This GaN transistor features an industry-leading RDS(on) x QG figure of merit with zero reverse recovery and superior thermal performance. It has ultra-low gate charge and faster switching speeds for high-frequency operations.   

This RoHS-compliant GaN transistor has exceptionally high electron mobility and a low temperature coefficient, while the lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. It is available in a surface-mount package that measures 3.3 x 3.3 mm and is ideal for high-performance, high power-density DC-DC conversion, high frequency DC-DC conversion, synchronous rectifiers and point-of-load buck converters.