GaN Power Transistor by Efficient Power Conversion (85 more products)

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EPC7001 Image

The EPC7001 from Efficient Power Conversion is a Radiation Hard GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.4 V, and a drain-source on-resistance of 2.1 milli-ohms. This GaN transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 250 A. It offers superior performance in a space environment because there are no minority carriers for a single event, causes less displacement for protons and neutrons as it is a wide band gap semiconductor, and prevents oxide layer formation that results in device breakdown.

This power transistor has exceptionally high electron mobility and a low temperature coefficient, thereby resulting in a very low drain-source on-resistance value. It has a lateral structure that provides a very low gate charge and fast switching times. The transistor is available as a passivated die that measures 4.1 x 1.6 mm and is ideal for radiation hard motor drives, deep space probes, high-frequency radiation hard DC-DC conversion, commercial satellite EPS and avionics, LiDAR, ion thrusters, and space applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    Radiation Hard GaN Power Transistor for Satellite Applications


  • Gate Threshold Voltage
    1.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    2.1 milli-ohm
  • Continous Drain Current
    60 A
  • Pulsed Drain Current
    250 A
  • Package Type
  • Applications
    Radiation hard motor drives, Deep space probes, High-frequency radiation hard DC-DC conversion, Commercial satellite EPS and avionics, LiDAR, Ion Thrusters, and Space Applications
  • Dimensions
    4.1 x 1.6 mm

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