The IGI60L1111B1M from Infineon Technologies is a GaN Half-Bridge Transistor that is ideal for low-power motor drives and SMPS utilising the superior switching behaviour of CoolGaN power switches. This GaN transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.2 V, and a drain-source on-resistance of 110 milli-ohms. It has a continuous drain current of up to 7.4 A and a pulsed drain current of less than 30 A. This JEDEC-qualified GaN transistor includes two GaN switches in a half-bridge configuration with integrated high- and low-side gate drivers. It features application-configurable turn-on and turn-off speed, an integrated ultra-fast low-resistance bootstrap diode, and fast input-to-output propagation with extremely small channel-to-channel mismatch. This RoHS-compliant transistor supports single-voltage operation (12 V typical), a low-side current sensing option, and a PWM input signal. It is available in a thermally enhanced surface-mount package that measures 6 x 8 mm.