The IGOT65R025D2 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 30 milli-ohms. It has a continuous drain current of up to 61 A and a pulsed drain current of less than 140 A. This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge. It offers superior commutation ruggedness, reduced electromagnetic interference (EMI), improved system and power efficiency, and enables higher operating frequency. This JEDEC-qualified power transistor exhibits ultra-fast switching and is capable of reverse conduction. It is available in a surface-mount package that measures 16.5 x 14.5 x 3.35 mm and is ideal for industrial, telecom, and data center SMPS (based on half-bridge topologies) applications.