INN700TH190B

GaN Power Transistor by Innoscience (68 more products)

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The INN700TH190B from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 700 V, Drain Source Resistance 138 to 300 milli-ohm, Continous Drain Current 11.5 A, Pulsed Drain Current 20.5 A. Tags: Through Hole. More details for INN700TH190B can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN700TH190B
  • Manufacturer
    Innoscience
  • Description
    700 V, 138 to 300 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.2 to 2.5 V
  • Drain Source Voltage
    700 V
  • Drain Source Resistance
    138 to 300 milli-ohm
  • Continous Drain Current
    11.5 A
  • Pulsed Drain Current
    20.5 A
  • Total Charge
    2.8 nC
  • Input Capacitance
    96 pF
  • Output Capacitance
    30 pF
  • Turn-on Delay Time
    1.4 ns
  • Turn-off Delay Time
    1.7 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter, LED driver, Fast battery charger, Notebook/AIO adaptor, Desktop PC/ATX/TV/power tool power supply

Technical Documents