The NV6113 from Navitas Semiconductors is an Enhancement Mode GaN Power IC that is optimized for high-frequency, soft-switching topologies. It has a drain-source voltage of up to 800 V and a drain-source on-resistance of less than 420 milli-ohms. This transistor has a continuous drain current of up to 5 A and a pulsed drain current of less than 10 A. It monolithically integrates FET, drive, and logic circuits to create an easy-to-use, digital-in, power-out high-performance power-train building block, thereby enabling designers to develop the fastest, smallest, and most efficient power converters. This REACH-compliant transistor offers the highest dV/dt immunity and minimized package inductance that allows the designers to exploit Navitas’ GaN technology for achieving breakthrough power density and efficiency. 

The NV6113 ensures zero reverse recovery charge and provides electrostatic discharge (ESD) protection. This RoHS-compliant GaN transistor is available in a surface-mount package that measures 5 x 6 mm and is ideal for AC-DC, DC-DC, DC-AC conversions, QR flyback, PFC, AHB, Buck, Boost, Half-Bridge, Full-Bridge, LLC resonant, class D, wireless power, solar micro-inverters, LED lighting, TV SMPS, server, and telecom applications.