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NV6513

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The NV6513 from Navitas Semiconductor is a GaN Power Transistor with Drain Source Voltage -7 to 650 V, Drain Source Resistance 32 to 77 milii-ohm, Continous Drain Current 33 to 53 A, Pulsed Drain Current 48 to 106 A, Output Capacitance 91 pF. Tags: Surface Mount. More details for NV6513 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NV6513
  • Manufacturer
    Navitas Semiconductor
  • Description
    -7 to 650 V, 33 to 53 A, Single GaN Transistor

General

  • Configuration
    Single View all
  • Industry
    Industrial, Commercial
  • Drain Source Voltage
    -7 to 650 V
  • Drain Source Resistance
    32 to 77 milii-ohm
  • Continous Drain Current
    33 to 53 A
  • Pulsed Drain Current
    48 to 106 A
  • Output Capacitance
    91 pF
  • Turn-on Delay Time
    25 to 37 ns
  • Turn-off Delay Time
    7 to 14 ns
  • Rise Time
    8 ns
  • Fall Time
    8 ns
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q100 View all
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    TOLL-4L
  • Applications
    AC-DC, DC-DC, CCM or CrM TP-PFC, Optimized for synchronous half-bridge, Fullbridge, 3-phase, Or buck/boost operation, Data Center CRPS, Solar Inverter/ESS, EV OBC & DC-DC converter, Motor drive

Technical Documents
View details on the manufacturer's website
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