GaN Power Transistor by ROHM Semiconductor (4 more products)

Note : Your request will be directed to ROHM Semiconductor.

GNP1070TC-Z Image

The GNP1070TC-Z from ROHM Semiconductor is an Enhancement Mode GaN Power Transistor that has achieved the industry’s highest figure of merit (FOM). It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 1.45 V, and a drain-source on-resistance of 73 milli-ohms. This transistor has a continuous drain current of up to 20 A and a pulsed drain current of less than 66 A. It efficiently utilizes the benefits of low drain-source on-resistance and high-speed switching to offer high power conversion efficiency and a size reduction. This GaN transistor integrates electrostatic discharge (ESD) protection functions to ensure a highly reliable design. It is integrated into a highly versatile package that provides excellent heat dissipation and facilitates mounting. This RoHS-compliant transistor is available in a surface-mount package that measures 8.0 x 8.0 x 0.9 mm and is ideal for high-switching frequency converters and high-density converter applications.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V Enhancement Mode GaN Power Transistor


  • Gate Threshold Voltage
    1.45 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    73 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    66 A
  • Total Charge
    5.2 nC
  • Input Capacitance
    200 pF
  • Output Capacitance
    50 pF
  • Turn-on Delay Time
    5.9 ns
  • Turn-off Delay Time
    8 ns
  • Rise Time
    6.9 ns
  • Fall Time
    8.7 ns
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    High switching frequency converter, High density converter
  • Dimensions
    8.0 x 8.0 x 0.9 mm

Technical Documents