GaN Power Transistor by ROHM Semiconductor (4 more products)

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GNP1150TCA-Z Image

The GNP1150TCA-Z from ROHM Semiconductor is an Enhancement Mode GaN FET that is ideal for high switching frequency converters and high-density converter applications. It has a drain-source voltage of over 650 V, a gate-source voltage of –10 V to –6 V, and a drain-source on-resistance of 150 milli-ohms. This GaN transistor has a continuous drain current of up to 11 A and a pulsed drain current of less than 35 A. It offers low on-state resistance and high-speed switching, which results in an increased power conversion efficiency and reduced size. This EcoGaN series transistor includes built-in electrostatic discharge (ESD) protection and heat dissipation functionalities for a high-reliability design and facilitates easy mounting. It is available in a surface-mount package that measures 8 x 8 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V Enhancement Mode GaN Field Effect Transistor


  • Gate Threshold Voltage
    1.45 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    150 milli-ohm
  • Continous Drain Current
    11 A
  • Pulsed Drain Current
    35 A
  • Total Charge
    2.7 nC
  • Input Capacitance
    112 pF
  • Output Capacitance
    19 pF
  • Turn-on Delay Time
    4.7 ns
  • Turn-off Delay Time
    6.2 ns
  • Rise Time
    5.3 ns
  • Fall Time
    8.3 ns
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    High switching frequency converter, High density converter
  • Dimensions
    8 x 8 mm

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