GaN Power Transistor by Solid State Devices (20 more products)

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SGF15D100J Image

The SGF15D100J from Solid State Devices is a Depletion Mode GaN Power Transistor that is ideal for high-efficiency DC-DC / PoL converters, motor controllers, robotics/automation, and military and aerospace applications. This power transistor has a drain-source breakdown voltage of over 1000 V, a gate threshold voltage of -12 V, and a drain-source on-resistance of 140 milli-ohms. It has a continuous drain current of up to 15 A and a pulsed drain current of less than 58 A. This transistor is based on the third-generation Gallium Nitride technology that offers superior advantages over the Silicon-based MOSFET counterpart. It has a zero reverse recovery charge with a low gate charge that simplifies the gate driver circuit. This transistor has low cross-over losses and thermal resistance to improve thermal enhancement for aerospace applications. It offers very fast switching with low on-state losses making it suitable for high-frequency applications. This normally-on GaN transistor is available in a through-hole package that measures 1.760 x 0.420 inches.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Solid State Devices
  • Description
    1000 V Depletion Mode GaN Power Transistor


  • Configuration
  • Industry
    Military, Space, Commercial, Industrial
  • Gate Threshold Voltage
    -12 V
  • Drain Source Voltage
    1000 V
  • Drain Source Resistance
    140 milli-ohm
  • Continous Drain Current
    15 A
  • Pulsed Drain Current
    58 A
  • Total Charge
    30 nC
  • Input Capacitance
    135 pF
  • Output Capacitance
    44 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    High Efficiency DC-DC / PoL Converters, Motor Controller, Robotics/Automation
  • Dimensions
    1.760 x 0.420 inches

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