TSG65N190CR RVG

GaN Power Transistor by Taiwan Semiconductor (3 more products)

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The TSG65N190CR RVG from Taiwan Semiconductor is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 150 to 380 milli-ohm, Continous Drain Current 11 A, Pulsed Drain Current 19 A. Tags: Surface Mount. More details for TSG65N190CR RVG can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSG65N190CR RVG
  • Manufacturer
    Taiwan Semiconductor
  • Description
    650 V, 150 to 380 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    150 to 380 milli-ohm
  • Continous Drain Current
    11 A
  • Pulsed Drain Current
    19 A
  • Total Charge
    2.2 nC
  • Input Capacitance
    70 pF
  • Output Capacitance
    20 pF
  • Turn-on Delay Time
    5 nS
  • Turn-off Delay Time
    8 nS
  • Rise Time
    5 nS
  • Fall Time
    10 nS
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56
  • Applications
    Power Adapters, LED Lighting Drivers, Fast Battery Charging, Power Factor Correction, Appliance Motor Drives, Wireless Power Transfer, Power Supplies

Technical Documents