PGC8FN65R110A

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The PGC8FN65R110A from Xindao Electronic Technology is a GaN Power Transistor with Gate Threshold Voltage 3 to 4.8 V, Drain Source Voltage 650 V, Drain Source Resistance 110 to 230 milli-ohm, Continous Drain Current 20 A, Pulsed Drain Current 35 A. Tags: Surface Mount. More details for PGC8FN65R110A can be seen below.

Product Specifications

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Product Details

  • Part Number
    PGC8FN65R110A
  • Manufacturer
    Xindao Electronic Technology
  • Description
    650 V, 110 to 230 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    3 to 4.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    110 to 230 milli-ohm
  • Continous Drain Current
    20 A
  • Pulsed Drain Current
    35 A
  • Total Charge
    7.9 nC
  • Input Capacitance
    293 pF
  • Output Capacitance
    17 pF
  • Turn-on Delay Time
    3.2 ns
  • Turn-off Delay Time
    7.4 ns
  • Rise Time
    5.5 ns
  • Fall Time
    27 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8L
  • Applications
    Fast charger, Renewable energy, Telecom and data-com, Servo motors
  • Dimensions
    8 x 8 mm

Technical Documents