CAB016M12FM3

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CAB016M12FM3 Image

The CAB016M12FM3 from Wolfspeed is a Half-Bridge Silicon Carbide (SiC) MOSFET that is ideal for EV chargers, high-efficiency converters/inverters, renewable energy, smart grids, grid-tied distributed generation, and DC-DC conversion applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 22.1 milli-ohms. This MOSFET has a continuous drain current of 84 A and a power dissipation of 184 W. It is a normally off device that ensures very low switching and conduction loss, thereby delivering increased system efficiency. This half-bridge MOSFET also has an option for pre-applied thermal interface material, which contributes to reduced thermal requirements. It is available in a module that measures 62.8 x 16.4 mm.

Product Specifications

Product Details

  • Part Number
    CAB016M12FM3
  • Manufacturer
    Wolfspeed
  • Description
    1200 V Half-Bridge SiC MOSFET

General

  • Types of Gate Driver
    Half Bridge Gate Driver View all
  • Technology
    SiC MOSFET
  • Configuration
    Isolated
  • No of Drivers
  • Number of Outputs
    Dual
  • Input Voltage
    8 to 19 V
  • Output Voltage
    1200 V
  • Isolation Voltage
    3000 V
  • Output Current
    78 to 82 A
  • Temperature operating range
    -40 to 175 Degree C
  • RoHS Compliant
    Yes
  • Industry
    Industrial
  • Package Type
    Chasis Mount View all
  • Dimensions
    62.8 x 33.8 mm
  • Applications
    EV Chargers, Solar, High-Efficiency Converters / Inverters, Motor & Traction Drives, Smart-Grid / Grid-Tied Distributed Generation

Technical Documents