GaN Power Transistor by Efficient Power Conversion (85 more products)

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EPC2307 Image

The EPC2307 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for synchronous rectification, AC/DC chargers, SMPS, adaptors, high-frequency DC-DC conversion, class-D audio, wireless power, and high power LiDAR and dToF applications. It has a drain-to-source voltage of over 200 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 10 milli-ohms. The GaN transistor has a continuous drain current of up to 48 A and a pulsed drain current of less than 130 A. It offers extremely high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values.  This GaN power transistor consists of a lateral structure that provides low gate charge and integrates a majority charge carrier diode that offers zero reverse recovery charge.

This RoHS-compliant GaN power transistor has an ultra-small footprint and offers a high power density, low conduction losses, and lower switching losses, which results in a higher efficiency. It is available in a surface mount package that measures 3 x 5 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Enhancement Mode GaN Power Transistor for LiDAR Applications


  • Configuration
  • Gate Threshold Voltage
    2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    10 milli-ohm
  • Continous Drain Current
    48 A
  • Pulsed Drain Current
    130 A
  • Total Charge
    10.6 nC
  • Input Capacitance
    1401 pF
  • Output Capacitance
    326 pF
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Synchronous Rectification, AC/DC chargers, SMPS, adaptors, High Frequency DC-DC Conversion, Class D audio, Wireless Power, High power lidar & dToF
  • Dimensions
    3 x 5 mm

Technical Documents