The IGL65R055D2 from Infineon Technologies is an Automotive-Grade Enhancement Mode GaN Transistor designed for power conversion at 650 V. This RoHS-compliant transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of up to 1.6 V, and a drain-source on-resistance of less than 70 milli-ohms. It has a continuous drain current of 22 A and a pulsed drain current of less than 60 A. This normally off transistor provides superior commutation ruggedness and meets 2 kV HBM (Human Body Model) ESD standards. It offers ultra-low gate and output charge and features zero reverse recovery charge. This AEC-Q101 qualified GaN transistor is available in a surface-mount package that measures 8 x 8 x 1.1 mm. It is ideal for industrial, telecom, data center SMPS based on half-bridge hard and soft switching topologies, such as totem pole PFC and high frequency LLC, as well as chargers and adapters.