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IGI60L1414B1M

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IGI60L1414B1M Image

The IGI60L1414B1M from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 140 to 300 milli-ohm, Continous Drain Current 4.3 to 6 A, Pulsed Drain Current 14 to 23 A. Tags: Surface Mount. More details for IGI60L1414B1M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGI60L1414B1M
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 4.3 to 6 A, GaN Transistor

General

  • Configuration
    Half Bridge View all
  • Industry
    Industrial, Commercial
  • Gate Threshold Voltage
    0.9 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    140 to 300 milli-ohm
  • Continous Drain Current
    4.3 to 6 A
  • Pulsed Drain Current
    14 to 23 A
  • Total Charge
    1.8 nC
  • Input Capacitance
    133 pF
  • Output Capacitance
    22 pF
  • Turn-on Delay Time
    90 to 110 ns
  • Turn-off Delay Time
    90 to 110 ns
  • Rise Time
    70 to 170 ns
  • Fall Time
    35 to 90 ns
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    PG-TFLGA-27-2
  • Applications
    Low power motor drives, Low power SMPS
  • Dimensions
    6 x 8 mm

Technical Documents
View details on the manufacturer's website
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