GaN Power Transistor by Wise-integration

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WI62120T Image

The WI62120T from Wise-integration is an Enhancement Mode Half-Bridge GaN-on-Silicon Power IC that is ideal for high-efficiency power conversion, high-density power conversion, bridgeless totem-pole PFC, active clamp flyback (ACF), LLC resonant converters, half-bridge topologies, synchronous buck or boost, small-medium UPS, fast battery charging, AC-DC, DC-DC, and DC-AC applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.3 V, and a drain-source on-resistance of 113 milli-ohms. This Power IC has a continuous drain current of up to 13 A and a total charge of 2.75 nC. It exhibits the properties of GaN material that allow for high current, high voltage breakdown, and high switching frequency. This transistor IC is available in a surface-mount package that measures 6 x 8 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V Enhancement Mode GaN-on-Si Power IC


  • Configuration
    Half Bridge
  • Gate Threshold Voltage
    1.3 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    113 milli-ohm
  • Continous Drain Current
    13 A
  • Total Charge
    2.75 nC
  • Input Capacitance
    96.8 pF
  • Output Capacitance
    21.9 pF
  • Temperature operating range
    -40 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    High efficiency power conversion, High density power conversion, AC-DC, DC-DC, DC-AC, Bridgeless Totem Pole PFC, ACF (active clamp flyback), LLC resonant converter, Half-bridge topologies, Synchronous Buck or Boost, Small-Medium UPS, Fast Battery Charging
  • Dimensions
    6 x 8 mm

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