The WI62120T from Wise-integration is an Enhancement Mode Half-Bridge GaN-on-Silicon Power IC that is ideal for high-efficiency power conversion, high-density power conversion, bridgeless totem-pole PFC, active clamp flyback (ACF), LLC resonant converters, half-bridge topologies, synchronous buck or boost, small-medium UPS, fast battery charging, AC-DC, DC-DC, and DC-AC applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.3 V, and a drain-source on-resistance of 113 milli-ohms. This Power IC has a continuous drain current of up to 13 A and a total charge of 2.75 nC. It exhibits the properties of GaN material that allow for high current, high voltage breakdown, and high switching frequency. This transistor IC is available in a surface-mount package that measures 6 x 8 mm.