IGT40R070D1 E8220

GaN Power Transistor by Infineon Technologies (5 more products)

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IGT40R070D1 E8220 Image

The IGT40R070D1 E8220 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for class-D audio amplifier applications. This transistor has a drain-source breakdown voltage of 400 V, a gate threshold voltage of 1.2 V, and a drain-source resistance of 70 milli-ohms. It has a continuous drain current of up to 31 A and a pulsed drain current of less than 60 A . This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge, delivering an improved efficiency due to figure of merit (FOM) in the 400 V product class. It offers superior commutation ruggedness while being compatible with the existing control ICs. This JEDEC-qualified power transistor exhibits ultra-fast switching and is capable of reverse conduction. It has a lower total harmonic distortion when compared to best-in class silicon switches. This power transistor is available in a surface-mount package that measures 11.67 x 9.9 mm.

Product Specifications

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Product Details

  • Part Number
    IGT40R070D1 E8220
  • Manufacturer
    Infineon Technologies
  • Description
    400 V Enhancement Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.2 V
  • Drain Source Voltage
    400 V
  • Drain Source Resistance
    70 milli-ohm
  • Continous Drain Current
    31 A
  • Pulsed Drain Current
    60 A
  • Total Charge
    4.5 nC
  • Input Capacitance
    382 pF
  • Output Capacitance
    72 pF
  • Turn-on Delay Time
    11 ns
  • Turn-off Delay Time
    11 ns
  • Rise Time
    7.5 ns
  • Fall Time
    9 ns
  • Temperature operating range
    0 to +150 °C
  • Qualification
    JEDEC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HSOF-8
  • Applications
    Class-D Audio Amplifier
  • Dimensions
    11.67 x 9.9 mm

Technical Documents