The NV6117 from Navitas Semiconductor is a GaNFast Power IC that has been optimized for high-frequency, soft-switching topologies. It has a drain-source voltage of up to 800 V and a drain-source on-resistance of 120 milli-ohms. This GaN transistor has a continuous drain current of up to 12 A and a pulsed drain current of less than 24 A. It monolithically integrates FET, drive, and logic to create an easy-to-use, digital-in, power-out, high-performance powertrain building block, enabling designers to develop the fastest, smallest, and most efficient integrated powertrain in the world. This REACH-compliant transistor offers electrostatic discharge (ESD) protection and a zero reverse recovery charge. It provides the highest dV/dt immunity, high-speed integrated drive, and low inductance in an industry-standard low-profile footprint.
This RoHS-compliant Power IC is available in a surface-mount package that measures 5 x 6 mm and is ideal for AC-DC/DC-DC/DC-AC converters, quasi-resonant flyback controllers, notebook adapters, mobile fast chargers, adapters, active clamp flyback controller, LED lighting, solar micro-inverters, TV/monitor, wireless power, server, telecom, and networking SMPS applications.