The NV6525 from Navitas Semiconductor is an Automotive-Qualified GaN Power IC that is ideal for AC/DC, DC-DC, CCM/CrM topologies, data center CRPS, on-board chargers, solar inverters, and motor drive applications. This transistor has a drain-source voltage of over 650 V. It has a continuous drain current of up to 65 A and a pulsed drain current of 125 A. This AEC-Q100 Grade 1-qualified power IC is optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and high-efficiency power systems in data center, solar, industrial, and automotive segments. This technology integrates critical protection and performance features that enable unprecedented reliability and robustness.
This GaN transistor is driven using a pulse width modulation (PWM) compatible input and can be paralleled with up to 2x power ICs to deliver enhanced efficiency. It is equipped with short-circuit protection with a latency of 350 ns, a 2 kV electrostatic discharge (ESD) protection on all pins, and a programmable dV/dt capability. This JEDEC/IPC-9701-rated transistor also has zero reverse recovery charge to further boost the efficiency. It is available in a thermally-enhanced top-cooled surface-mount package that measures 15.20 x 10.10 mm.
