GaN Power Transistor by Renesas (5 more products)

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ISL70023SEHML Image

The ISL70023SEHML from Renesas is an Enhancement Mode GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush protection, and downhole drilling applications. The transistor has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 12 milli-ohms. It has a continuous drain current of up to 60 A. This transistor provides the ability to significantly reduce gate drive power and lower the cost. It is manufactured for destructive single-event effects (SEE) and has been tested for total ionizing dose (TID) radiation to ensure reliability in space environments. This MIL-PRF-38535-rated GaN transistor has exceptionally high electron mobility and a low temperature coefficient, thereby resulting in a very low on-state drain source resistance value, while its lateral device structure and majority carrier diode provide exceptionally low gate charge and near-zero reverse recovery charge, making it reliable for higher switching frequency and efficiency applications. This RoHS-compliant transistor is available in a hermetically-sealed surface-mount package that measures 9.0 x 4.7 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    100 V Radiation Hard GaN Power Transistor for Relay Applications


  • Configuration
  • Industry
  • Gate Threshold Voltage
    2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    12 milli-ohm
  • Continous Drain Current
    60 A
  • Total Charge
    14 to 25 nC
  • Input Capacitance
    1500 pF
  • Output Capacitance
    960 to 1250 pF
  • Temperature operating range
    -55 to 125 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Switching regulation, Motor drives, Relay drives, Inrush protection, Down hole drilling, High reliability industrial
  • Dimensions
    9.0 x 4.7 mm

Technical Documents