GaN Power Transistor by Renesas (5 more products)

Note : Your request will be directed to Renesas.

The ISL70023SEH from Renesas is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 3 V, Drain Source Voltage 100 V, Drain Source Resistance 5 to 12 milli-ohm, Continous Drain Current 60 A, Total Charge 14 to 25 nC. Tags: Surface Mount. More details for ISL70023SEH can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    100V, 60A Enhancement Mode GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    0.7 to 3 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    5 to 12 milli-ohm
  • Continous Drain Current
    60 A
  • Total Charge
    14 to 25 nC
  • Input Capacitance
    1500 pF
  • Output Capacitance
    960 to 1250 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Switching regulation, Motor drives, Relay drives, Inrush protection, Down hole drilling, High reliability industrial
  • Dimensions
    6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.