The GANB1R2-040QBA from Nexperia is a Bi-Directional GaN Field Effect Transistor (FET) that is ideal for high-side load switch, OVP protection in smart phone USB port, power switch circuits and stand-by power system. It has a drain-drain voltage of up to 40 V, a gate-source threshold voltage of up to 2.4 V, and a drain-drain on-state resistance of up to 1.2 milli-ohms. This GaN transistor has a drain current of up to 100 A and a power dissipation of up to 105 W. It is a normally off enhancement mode device offering superior performance and very low on-state resistance. This GaN power transistor has a low gate charge of 60 nC and output charge, which results in high efficiency and power density to support very high-frequency switching applications. This RoHS/REACH-compliant GaN FET is available in surface-mount package that measures 4 x 6 mm.