The GANE240-700BBA from Nexperia is an Enhancement Mode GaN Field Effect Transistor. This transistor has a drain-source voltage of up to 700 V, a gate threshold voltage of less than 2.5 V, and a drain-source on-resistance of 240 milli-ohms. It has a drain current of up to 10 A and a pulsed drain current of less than 18 A. This normally-off transistor has a low gate charge and low output charge, which gives it high efficiency and power density. It has no body diode and provides electrostatic discharge (ESD) protection capability for ultra-high frequency switching operations. This RoHS/REACH-compliant GaN transistor is available in a surface-mount package that measures 8 x 8 mm and is ideal for high power density and high-efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, fast battery charging, mobile phones, laptop, tablet and USB type-C chargers, datacom and telecom (AC-to-DC and DC-to-DC) converters, motor drives, solar (PV) inverters, Class D audio amplifiers, TV PSU and LED driver applications.