GaN Power Transistor by Innoscience (68 more products)

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INN650D190A Image

The INN650D190A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for DCM/BCM PFC, AHB/LLC/QR flyback/ACF DCDC converter, LED driver, fast battery charger, notebook/AIO adaptor and desktop PC/ATX/TV/power tool power supply applications. This JEDEC-qualified GaN transistor has a drain-source breakdown voltage of up to 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 190 milli-ohms. It has a continuous drain current of up to 11.5 A and a pulsed drain current of less than 20.5 A. This REACH-compliant GaN-on-Si transistor is a normally-off power switch that offers a very high switching frequency. It provides zero reverse recovery charge, a low gate charge, and a low output charge. This RoHS-compliant power transistor provides electrostatic discharge (ESD) protection for high reliability in industrial environments. It is available in a surface-mount package that measures 8 x 8 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    650 V Enhancement Mode GaN-on-Silicon Power Transistor


  • Configuration
  • Gate Threshold Voltage
    1.7 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    190 milli-ohm
  • Continous Drain Current
    11.5 A
  • Pulsed Drain Current
    20.5 A
  • Total Charge
    2.8 nC
  • Input Capacitance
    96 pF
  • Output Capacitance
    30 pF
  • Turn-on Delay Time
    1.4 ns
  • Turn-off Delay Time
    1.7 ns
  • Rise Time
    4 ns
  • Fall Time
    4 ns
  • Temperature operating range
    -55 to 150 degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    DFN 8X8
  • Applications
    DCM/BCM PFC, AHB/LLC/QR Flyback/ACF DCDC converter, LED driver, Fast battery charger, Notebook/AIO adaptor, Desktop PC/ATX/TV/power tool power supply
  • Dimensions
    8 x 8 mm

Technical Documents