GaN Power Transistor by Renesas (5 more products)

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The ISL73020SEH from Renesas is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 1.2 to 8 milli-ohm, Continous Drain Current 65 A, Total Charge 19 to 25 nC. Tags: Surface Mount. More details for ISL73020SEH can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    40V, 65A Enhancement Mode GaN Power Transistors


  • Configuration
  • Industry
  • Gate Threshold Voltage
    0.7 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    1.2 to 8 milli-ohm
  • Continous Drain Current
    65 A
  • Total Charge
    19 to 25 nC
  • Input Capacitance
    1920 pF
  • Output Capacitance
    1620 to 2430 pF
  • Temperature operating range
    -55 to 125 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Switching regulation, Motor drives, Relay drives, Inrush protection, Down hole drilling, High reliability industrial
  • Dimensions
    6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)

Technical Documents

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