The ISL73020SEH from Renesas is a Radiation-Hard N-Channel Enhancement Mode GaN Power Transistor that is ideal for switching regulation, motor drives, relay drives, inrush current protection, down-hole drilling, and high reliability industrial applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of 3.5 milli-ohms. This transistor has a continuous drain current of up to 65 A. It can withstand the destructive single event effect (SEE) of 86.4 MeV.cm2/mg and a total ionizing dose (TID) of 100 krad (HDR) and 75 krad (LDR).  

This GaN transistor provides high electron mobility and low temperature coefficient, while its lateral device structure combined with a majority carrier diode results in very low gate charge and zero reverse recovery charge. These features together contribute to a higher switching frequency with an enhanced efficiency in a reduced form-factor. This transistor is available in a hermetically sealed surface-mount package that measures 9 x 4.7 mm.