SGT65R65AL

GaN Power Transistor by STMicroelectronics (1 more product)

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The SGT65R65AL from STMicroelectronics is a GaN Power Transistor with Gate Threshold Voltage 1.8 V, Drain Source Voltage 650 V, Drain Source Resistance 49 to 116 milli-ohm, Continous Drain Current 25 A, Pulsed Drain Current 70 A. Tags: Surface Mount. More details for SGT65R65AL can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGT65R65AL
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, 49 to 116 milli-ohm, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.8 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    49 to 116 milli-ohm
  • Continous Drain Current
    25 A
  • Pulsed Drain Current
    70 A
  • Total Charge
    5.4 nC
  • Input Capacitance
    286 pF
  • Output Capacitance
    85 pF
  • Turn-on Delay Time
    5.2 ns
  • Turn-off Delay Time
    10 ns
  • Rise Time
    10.9 ns
  • Fall Time
    5.3 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    AC-DC converters, AC-DC PSU for server and telecom, LED illumination, Uninterruptable power supplies (UPS)

Technical Documents