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AOCR33105E Image

The AOCR33105E from Alpha and Omega Semiconductor is a Common-Drain Dual-N-Channel Enhancement Mode MOSFET that is ideal for battery protection switches, mobile device battery charging and discharging applications. It has a source-source breakdown voltage of over 12 V, a gate threshold voltage of 0.9 V, and a source-source on-resistance of 2.3 milli-ohms. This MOSFET has a continuous drain current of up to 30 A and a power dissipation of less than 3.1 W. It harnesses the benefits of trench-power MOSFET technology for enhanced efficiency and performance. This MOSFET, equipped with ultra-low source-source on-resistance, offers minimal resistance. It comes with electrostatic discharge (ESD) protection, enhancing safety and boosting battery performance, establishing itself as a dependable choice. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2.08 x 1.45 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    12 V Common-Drain Dual N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Dimensions
    2.08 x 1.45 mm
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    2.3 milli-ohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    8 V
  • Gate Source Threshold Voltage
    0.9 V
  • Power Dissipation
    3.1 W
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Applications
    Bbattery protection switch, mobile device battery charging and discharging

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