The IXTY2P50PA from Littelfuse is an AEC-Q101 Qualified P-Channel Enhancement Mode Power MOSFET that is ideal for high-side switches, push-pull amplifiers, DC choppers, automatic test equipment, and current regulator applications. It has a drain-source breakdown voltage of up to -500 V, a gate threshold voltage of less than -2.5 V, and a drain-source on-resistance of 4.2 ohms. This power MOSFET has a continuous drain current of up to -6 A and a power dissipation of less than 58 W. It is designed using the Polar technology platform that reduces the on-state resistance and gate charge requirements. This AEC-Q101-qualified MOSFET has low package inductance that results in low conduction loss and excellent switching performance. It is avalanche-rated with its dynamic dv/dt, making it extremely rugged in demanding operating environments and applications. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 9.40 x 6.35 mm.