IXTY2P50PA

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IXTY2P50PA Image

The IXTY2P50PA from Littelfuse is an AEC-Q101 Qualified P-Channel Enhancement Mode Power MOSFET that is ideal for high-side switches, push-pull amplifiers, DC choppers, automatic test equipment, and current regulator applications. It has a drain-source breakdown voltage of up to -500 V, a gate threshold voltage of less than -2.5 V, and a drain-source on-resistance of 4.2 ohms. This power MOSFET has a continuous drain current of up to -6 A and a power dissipation of less than 58 W. It is designed using the Polar technology platform that reduces the on-state resistance and gate charge requirements. This AEC-Q101-qualified MOSFET has low package inductance that results in low conduction loss and excellent switching performance. It is avalanche-rated with its dynamic dv/dt, making it extremely rugged in demanding operating environments and applications. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 9.40 x 6.35 mm.

Product Specifications

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Product Details

  • Part Number
    IXTY2P50PA
  • Manufacturer
    Littelfuse
  • Description
    AEC-Q101 Qualified P-Channel Enhancement Mode MOSFET

General

  • Transistor Polarity
    P-Channel
  • Dimensions
    9.40 x 6.35 mm
  • Continous Drain Current
    -6 A
  • Drain Source Resistance
    4.2 ohms
  • Drain Source Breakdown Voltage
    -500 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 V
  • Power Dissipation
    58 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    High-side switches, Push-pull amplifiers, DC choppers, Automatic test equipment, and Current regulator applications

Technical Documents