The XP161A1265PR-G from Torex Semiconductor is an N-channel Power MOSFET that is ideal for notebook PCs, cellular and portable phones, onboard power supplies, and Li-ion battery system applications. It has a drain-source breakdown voltage of 20 V, a gate-to-source voltage of ±12 V, and a drain-source on-resistance of less than 95 milli-ohms. This power MOSFET has a continuous drain current of up to 4 A and a power dissipation of less than 2 W. It enables efficient energy savings by facilitating high-speed switching and low on-state resistance. The MOSFET features a built-in gate-protect diode to prevent damage from static electricity. It employs a double-diffused metal-oxide-semiconductor (DMOS) structure and offers a reliable solution for various applications. This RoHS-compliant MOSFET is available in a surface-mount package.