The XPN19014MC from Toshiba is an Automotive-Qualified P-Channel Enhancement Mode MOSFET that is ideal for automotive, switching voltage regulators, DC-DC converters, and motor driver applications. It has a drain-source breakdown voltage of over -40 V, a gate threshold voltage of less than -1 V, and a drain-source on-resistance of up to 18.7 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to -20 A and a power dissipation of less than 65 W. It is available in a surface-mount package that measures 3.6 x 3.1 mm.
