GaN Power Transistor by EPC Space (8 more products)

Note : Your request will be directed to EPC Space.

The EPC7014UB from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 60 V, Drain Source Resistance 340 to 580 milli-ohm, Continous Drain Current 1 A, Pulsed Drain Current 4 A. Tags: Surface Mount. More details for EPC7014UB can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    EPC Space
  • Description
    60 V, 1 A, GaN Power Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    60 V
  • Drain Source Resistance
    340 to 580 milli-ohm
  • Continous Drain Current
    1 A
  • Pulsed Drain Current
    4 A
  • Total Charge
    0.142 to 0.184 nC
  • Input Capacitance
    16 to 22 pF
  • Output Capacitance
    0.1 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Commercial Satellite EPS & Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers, Nuclear Facilities
  • Dimensions
    3.25 x 2.74 mm

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.