GaN Power Transistor by EPC Space (16 more products)

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EPC7030G Image

The EPC7030G from EPC Space is a Radiation Hard eGaN Power Transistor that is ideal for commercial and industrial applications. This transistor has a drain-source voltage of over 300 V, a gate threshold voltage of 1.4 V, and a drain-source on-resistance of less than 32 milli-ohms. It has a continuous drain current of up to 50 A and a pulsed drain current of less than 200 A. This MIL-STD-750-compliant power transistor is available in a surface-mount package.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    EPC Space
  • Description
    300 V Radiation Hard eGaN Power Transistor


  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1.4 V
  • Drain Source Voltage
    300 V
  • Drain Source Resistance
    32 milli-ohm
  • Continous Drain Current
    50 A
  • Pulsed Drain Current
    200 A
  • Total Charge
    15 nC
  • Input Capacitance
    1155 pF
  • Output Capacitance
    235 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Dimensions
    8 x 5.6 mm

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