FBG10N30B

GaN Power Transistor by EPC Space (8 more products)

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The FBG10N30B from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 100 V, Drain Source Resistance 8 to 12 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 120 A. Tags: Surface Mount. More details for FBG10N30B can be seen below.

Product Specifications

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Product Details

  • Part Number
    FBG10N30B
  • Manufacturer
    EPC Space
  • Description
    100 V, 30 A, GaN Power Transistor

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    8 to 12 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    8.3 to 11 nC
  • Input Capacitance
    850 to 1000 pF
  • Output Capacitance
    500 to 700 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    5.7 x 3.9 mm

Technical Documents

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