GaN Power Transistor by EPC Space (10 more products)

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FBG10N30B Image

The FBG10N30B from EPC Space is a Radiation-Hard Enhancement Mode GaN Transistor that has been designed in a lightweight, compact hermetic package to meet the critical demands in high reliability or commercial satellite space environments. The transistor has a drain-source breakdown voltage of 100 V and a gate threshold voltage of 1.2 V. It has a continuous drain current of 30 A and drain-source resistance of 12 milli-ohms. This transistor has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain-source on-resistance value. It has a lateral die structure that offers very low gate charge and extremely fast switching times, thereby enabling faster power supply switching frequencies. It is provided with a dedicated source sense pin for enhanced performance by eliminating the common source inductance. 

The FBG10N30B is available in a surface-mount package that measures 5.4 x 3.6 x 1.9 mm and is ideal for satellite and avionics, deep space probes, high-speed rad hard DC-DC conversion, and rad-hard motor controller applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    EPC Space
  • Description
    100 V Radiation-Hard Enhancement Mode GaN Transistor


  • Configuration
  • Industry
  • Gate Threshold Voltage
    1.2 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    12 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    120 A
  • Total Charge
    8.3 to 11 nC
  • Input Capacitance
    850 to 1000 pF
  • Output Capacitance
    500 to 700 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    5.4 x 3.6 x 1.9 mm

Technical Documents