FBG20N04A

GaN Power Transistor by EPC Space (10 more products)

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The FBG20N04A from EPC Space is a Radiation Hardened GaN Power Transistor that is ideal for satellite and avionics, deep space probes, high speed rad hard DC-DC conversion and rad-hard motor controller applications. The transistor has a drain-source breakdown voltage of over 200 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 130 milli-ohms. It has a continuous drain current of up to 4 A and a pulsed drain current of less than 16 A. This transistor is specifically designed for critical applications in the high reliability or commercial satellite space environments. It has an exceptionally high electron mobility and a low-temperature coefficient, resulting in very low drain-source on-resistance values. The lateral structure of the die provides for very low gate charge and extremely fast switching times, thus enabling faster power supply switching frequencies. It has a Sorce Sense pin that reduces source terminal impedance to control the amount of gate drive voltage. This transistor is available in a surface-mount package that measures 3.175 x 3.175 mm.

Product Specifications

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Product Details

  • Part Number
    FBG20N04A
  • Manufacturer
    EPC Space
  • Description
    200 V Radiation-Hardened GaN Power Transistor

General

  • Configuration
    Single
  • Industry
    Space
  • Gate Threshold Voltage
    0.8 to 2.8 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    68 to 130 milli-ohm
  • Continous Drain Current
    4 A
  • Pulsed Drain Current
    16 A
  • Total Charge
    1.6 to 3 nC
  • Input Capacitance
    106 to 150 pF
  • Output Capacitance
    72 to 90 pF
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Applications
    Satellite and Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    3.4 x 3.4 mm

Technical Documents