The GANE350-650FBA from Nexperia is a GaN Field Effect Transistor (FET). It has a drain-source voltage of up to 650 V, a gate-source threshold voltage of up to 2.5 V, and a drain-source on-state resistance of up to 350 milli-ohms. This GaN transistor has a drain current of up to 6 A and a power dissipation of up to 65 W. It is a normally off enhancement mode transistor that offers superior performance and features ESD protection. This RoHS/REACH-compliant GaN power transistor features low gate and output charges, enabling high efficiency and power density in very high-frequency switching applications. It is available in a surface-mount package that measures 5 x 6 mm and is ideal for high-power density and high-efficiency power conversion, AC-to-DC converters, totem pole PFC, DC-to-DC converters, fast battery charging, mobile phone, laptop, tablet, USB type-C chargers, datacom, telecom (AC-to-DC and DC-to-DC) converters, motor drives, solar (PV) inverters, Class D audio amplifiers, TV PSU and LED drivers.