AOTL66912Q

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The AOTL66912Q from Alpha & Omega Semiconductor is an N-Channel Trench MOSFET that is ideal for telecom hot-swap, load switch, solar, and battery management applications. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 1.7 milli-ohms. This MOSFET has a continuous drain current of up to 380 A and a power dissipation of less than 500 W. It is designed based on AOS AlphaSGT technology that provides excellent figure of merit (FOM) to ensure balanced performance in hard-switching applications. This Trench MOSFET combines low drain-source on-resistance and a wide safe operating area (SOA), thereby resulting in improved packing density and high drive capability. It allows a higher inrush current for faster start-up and shorter downtime. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 5 x 6 mm.

Product Specifications

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Product Details

  • Part Number
    AOTL66912Q
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    100 V N-Channel Trench MOSFET for Telecom Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    5 x 6 mm
  • Continous Drain Current
    380 A
  • Drain Source Resistance
    1.7 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 V
  • Power Dissipation
    500 W
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Applications
    Telecom hot-swap, load switch, solar, and battery management applications

Technical Documents