The 5SFG 0580B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of 2.4 V. It has a drain-source breakdown voltage of less than 1200 V and a drain-source on-state resistance of 2.9 milliohm. This SiC MOSFET has a continuous drain current of up to 580 A and a pulsed drain current of 1160 A. It consists of a pin-fin structure that provides the lowest thermal resistance with enhanced liquid cooling performance. This SiC MOSFET has the lowest overall stray inductance thereby enabling efficient converter designs. It uses very easy and low inductive connections that allow the current rating of inverters to be scaled up with just one module type.
This SiC MOSFET is available as a molded chip that measures 110 x 69 x 17.35 mm and is ideal for the main drive drain for xEVs, e-trucks, e-buses, traction auxiliary converters, and xEV charging applications.
