5SFG 0580B12000x

MOSFET by Hitachi (2 more products)

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5SFG 0580B12000x Image

The 5SFG 0580B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a gate-source voltage of 15 V and a gate threshold voltage of 2.4 V. It has a drain-source breakdown voltage of less than 1200 V and a drain-source on-state resistance of 2.9 milliohm. This SiC MOSFET has a continuous drain current of up to 580 A and a pulsed drain current of 1160 A. It consists of a pin-fin structure that provides the lowest thermal resistance with enhanced liquid cooling performance. This SiC MOSFET has the lowest overall stray inductance thereby enabling efficient converter designs. It uses very easy and low inductive connections that allow the current rating of inverters to be scaled up with just one module type.

This SiC MOSFET is available as a molded chip that measures 110 x 69 x 17.35 mm and is ideal for the main drive drain for xEVs, e-trucks, e-buses, traction auxiliary converters, and xEV charging applications.

Product Specifications

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Product Details

  • Part Number
    5SFG 0580B12000x
  • Manufacturer
    Hitachi
  • Description
    1200 V N Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    110 x 69 x 17.35 mm
  • Continous Drain Current
    580 A
  • Drain Source Resistance
    2.9 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    15 V
  • Gate Source Threshold Voltage
    2.4 V
  • Gate Charge
    1.1 uC
  • Temperature operating range
    -40 to 175 degree C
  • Industry
    Automotive
  • Package Type
    Chip
  • Applications
    Main drive drain for xEVs, e-trucks, e-buses, traction auxiliary converters, xEV charging applications

Technical Documents