5SFG 0780B12000x

MOSFET by Hitachi (2 more products)

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5SFG 0780B12000x Image

The 5SFG 0780B12000x from Hitachi is an N-Channel Enhancement Mode SiC MOSFET that is designed for e-mobility applications. This MOSFET has a drain-source breakdown voltage of over 1200 V and a drain-source on-state resistance of 2.4 mΩ. It has a gate-source voltage of less than 15 V and a gate threshold voltage of 2.4 V. This SiC MOSFET has a continuous drain current of up to 780 A and a pulsed drain current of less than 1560 A. It consists of a pin-fin structure that offers the lowest thermal resistance with enhanced liquid cooling performance. This MOSFET provides the lowest overall stray inductance that can enable an efficient design of converters. It is available in a compact package that measures 110 x 69 x 17.35 mm and is ideal for main drive trains in xEVs, e-trucks, e-buses, traction auxiliary converters, and xEV-charging applications.

Product Specifications

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Product Details

  • Part Number
    5SFG 0780B12000x
  • Manufacturer
    Hitachi
  • Description
    1200 V N Channel SiC MOSFET for E-Mobility Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    110 x 69 x 17.35 mm
  • Continous Drain Current
    780 A
  • Drain Source Resistance
    2.4 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    15 V
  • Gate Source Threshold Voltage
    2.4 V
  • Gate Charge
    1.47 uC
  • Temperature operating range
    -40 to 175 degree C
  • Industry
    Automotive
  • Applications
    e-buses, e-trucks, Main drive drain for xEVs, traction auxiliary converters, xEV charging applications

Technical Documents