5SFG 0980B12000x Image

5SFG 0980B12000x

MOSFET by Hitachi (2 more products)

Note : Your request will be directed to Hitachi.

The 5SFG 0980B12000x from Hitachi is a MOSFET with Continous Drain Current 980 A, Drain Source Resistance 1.9 to 3.4 milli-ohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -4 to 15 V, Gate Source Threshold Voltage 1.7 to 3.5 V. Tags: Chip. More details for 5SFG 0980B12000x can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    5SFG 0980B12000x
  • Manufacturer
    Hitachi
  • Description
    1200 V 980 A SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Dimensions
    110 x 69 x 17.35 mm
  • Continous Drain Current
    980 A
  • Drain Source Resistance
    1.9 to 3.4 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -4 to 15 V
  • Gate Source Threshold Voltage
    1.7 to 3.5 V
  • Gate Charge
    1.84 uC
  • Temperature operating range
    -40 to 175 degree C
  • Package Type
    Chip

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.