IXTQ69N30P

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IXTQ69N30P Image

The IXTQ69N30P from Littelfuse is a MOSFET with Continous Drain Current 69 A, Drain Source Resistance 49 Milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 5 V. Tags: Through Hole. More details for IXTQ69N30P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTQ69N30P
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 180 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    69 A
  • Drain Source Resistance
    49 Milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 5 V
  • Gate Charge
    180 nC
  • Power Dissipation
    500 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    DC-DC Coverters, Battery Chargers, Switch-Mode and Resonant-Mode Power Supplies, DC Choppers, AC and DC Motor Drives, Uninterrupted Power Supplies, High Speed Power Switching Applications

Technical Documents