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BUK9M20-60EL Image

Nexperia is an Automotive-Qualified N-Channel Logic Level MOSFET. It has a drain-source breakdown voltage over 60 V, a gate threshold voltage of 1.67 V, and a drain-source on-resistance of 10.4 mΩ. It has a continuous drain current of less than 40 A, and power dissipation of 79.4 W. This AEC-Q101 qualified MOSFET uses LFPAK copper clip package technology that offers high robustness and current handing capability. It is based on an enhanced SOA technology that delivers an improved linear mode performance. This MOSFET is available as a surface mount package that measures 3.20 x 2.60 mm and is ideal for use in 12 V automotive systems and airbag squib voltage regulator MOSFET applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    N-Channel Logic Level MOSFET for Automotive Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    3.20 x 2.60 mm
  • Number of Channels
  • Continous Drain Current
    40 A
  • Drain Source Resistance
    10.4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1.67 V
  • Gate Charge
    56 nC
  • Power Dissipation
    79.4 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
    LFPAK33 (SOT1210)
  • Applications
    12 V automotive systems, Airbag squib voltage regulator MOSFET

Technical Documents