KFJ4B0421ZL

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The KFJ4B0421ZL from Nuvoton Technology is an Automotive-Qualified P-channel MOSFET.  It has a drain-source breakdown voltage of over -40 V, a gate threshold voltage of -2 V, and a drain-source on-resistance of less than 74 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to -4.2 A and a power dissipation of less than 1.7 W. It benefits from embossed-type thermo-compression sealing. This RoHS-compliant MOSFET is available in a surface-mount package that measures 1.2 x 1.2 x 0.1 mm and is ideal for automotive applications.

Product Specifications

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Product Details

  • Part Number
    KFJ4B0421ZL
  • Manufacturer
    Nuvoton Technology
  • Description
    AEC-Q101-Qualified P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Dimensions
    1.2 x 1.2 x 0.1 mm
  • Number of Channels
    Single
  • Continous Drain Current
    -4.2 A
  • Drain Source Resistance
    74 milli-ohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -2 V
  • Gate Charge
    8 nC
  • Switching Speed
    8 to 95 ns
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Chip
  • Package
    CSP
  • Applications
    1.2 x 1.2 x 0.1 mm
  • Note
    Input Capacitance :- 800 pF

Technical Documents